PART |
Description |
Maker |
TC7109 TC7109A |
The TC7109A is a 12-bit plus sign,CMOS low-power analog-to-digital converter (ADC).Only eight passive components and a crystal are required to form a complete dual-slope integrating ADC. The improved VOH source current TC7109A has features
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Microchip
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DG201BDY-E3 DG202BDY-E3 DG201BDJ-E3 DG201BDQ-E3 DG |
Improved Quad CMOS Analog Switches
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Vishay Siliconix
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DG309BDY DG309B DG308BDJ DG308BDQ DG308BDY DG309BD |
Improved Quad CMOS Analog Switches
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VISAY[Vishay Siliconix]
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KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM 524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA 512Kx8 bit CMOS static RAM, 100ns, low power 512Kx8 bit CMOS static RAM, 70ns, low power
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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LTC7541A LTC7541AKN LT7541A LTC7541 LTC7541AJN LTC |
Improved Industry Standard CMOS 12-Bit multiplying DAC From old datasheet system
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LINEAR TECHNOLOGY CORP
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AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM) 2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
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Alliance Semiconductor Corporation SEMICOA[Semicoa Semiconductor]
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IC62LV1024AL IC62LV1024ALL-45B IC62LV1024ALL-45BI |
70ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 128K x 8 Ultra Low Power and Low VCC SRAM From old datasheet system 55ns; 2.7-3.3V; 128K x 8 low-power and low Vcc CMOS static RAM
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ICSI[Integrated Circuit Solution Inc]
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BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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CVA2411 CVA2411TX |
Improved Low Cost Triple CRT Driver
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CALOGIC[Calogic, LLC]
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GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
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G-LINK Technology
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